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PSMN2R8-40PS_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – PSMN2R8-40PS_15
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NXP Semiconductors
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
10. Characteristics
Table 7. Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
IDSS
drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 125 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 100 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 175 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
[1]
Fig. 13
RG
internal gate
f = 1 MHz
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
ID = 25 A; VDS = 20 V; VGS = 10 V;
QGS
gate-source charge
Fig. 14; Fig. 15
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 20 V; Fig. 14; Fig. 15
Ciss
input capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 16
Min Typ Max Unit
36
-
40
-
-
-
-
V
-
V
4.6 V
1
-
-
V
2.3 3
4
V
-
0.3 10
µA
-
-
150 µA
-
10
100 nA
-
10
100 nA
-
-
4.5 mΩ
-
-
5.6 mΩ
-
2.3 2.8 mΩ
-
0.7 -
Ω
-
61
-
nC
-
71
-
nC
-
21
-
nC
-
13
-
nC
-
8.5 -
nC
-
17
-
nC
-
4.7 -
V
-
4491 -
pF
-
937 -
pF
PSMN2R8-40PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 February 2013
© NXP B.V. 2013. All rights reserved
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