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PSMN2R8-40PS_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – PSMN2R8-40PS_15 | |||
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PSMN2R8-40PS
N-channel TO220 40 V 2.8 m⦠standard level MOSFET
11 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
⢠High efficiency due to low switching and conduction losses
⢠Suitable for standard level gate drive sources
3. Applications
⢠DC-to-DC converters
⢠Load switching
⢠Motor control
⢠Server power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
Ptot
total power dissipation Tmb = 25 °C; Fig. 2
Tj
junction temperature
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 10 A; Tj = 100 °C;
resistance
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 20 V;
Fig. 14; Fig. 15
Min Typ Max Unit
-
-
40
V
[1]
-
-
100 A
-
-
211 W
-55 -
175 °C
-
[2]
-
-
4.5 mΩ
2.3 2.8 mΩ
-
17
-
nC
-
71
-
nC
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