PSMN006-20K Datasheet, PDF (8/12 Pages) NXP Semiconductors – TrenchMOS ultra low level FET

Philips Semiconductors
PSMN006-20K
TrenchMOS™ ultra low level FET
30
IS
(A)
VGS = 0 V
20
03ai67
5
VGS
(V)
4
VDD = 10 V
ID = 30 A
Tj = 25 °C
3
03ai69
2
10
Tj = 150 °C
25 °C
1
0
0
0.2
0.4
0.6
0.8
1
VSD (V)
0
0
20
40
60
80
QG (nC)
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 30 A; V_DD = 10 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 09631
Product data
Rev. 01 — 30 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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