PSMN006-20K Datasheet, PDF (6/12 Pages) NXP Semiconductors – TrenchMOS ultra low level FET

Philips Semiconductors
PSMN006-20K
TrenchMOS™ ultra low level FET
03ai64
03ai66
30
30
4.5 V 2.5 V 2 V
1.5 V
VDS > ID x RDSon
ID
ID
(A)
(A)
20
20
1.3 V
10
10
1.1 V
Tj = 150 °C
25 °C
VGS = 1 V
0
0
0.05
0.1
0.15
0.2
VDS (V)
0
0
0.4
0.8
1.2 _{VGS (V)} 1.6
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
RDSon
(mΩ)
8
Tj = 25 °C
03ai65
2
a
1.5
VGS = 1.5 V
6
2V
1
2.5 V
4
4.5 V
0.5
2
03af18
0
0
10
T_j = 25 °C
20
30
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 09631
Product data
Rev. 01 — 30 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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