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PSMN006-20K Datasheet, PDF (5/12 Pages) NXP Semiconductors – TrenchMOS ultra low level FET
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Philips Semiconductors
PSMN006-20K
TrenchMOS™ ultra low level FET
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
VDS = 20 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 5 A; Figure 7 and 8
VGS = 2.5 V; ID = 5 A; Figure 7 and 8
VGS = 1.8 V; ID = 5 A; Figure 8
gfs
forward transconductance
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = 15 V; ID = 10 A
ID = 30 A; VDD = 10 V; VGS = 2.5 V; Figure 13
VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11
VDD = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω
VSD
source-drain (diode forward) voltage IS = 3 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 10 A; dIS/dt = −70 A/µs; VGS = 0 V
Qr
recovery charge
Min Typ Max Unit
20 -
-
V
0.4 0.7 -
V
0.15 -
-
V
-
0.05 1 µA
-
-
0.5 mA
-
10 100 nA
-
4.2 5 mΩ
-
4.8 5.7 mΩ
-
5.7 8.2 mΩ
-
25 -
S
-
32 -
nC
-
10 -
nC
-
13.2 -
nC
-
4350 -
pF
-
825 -
pF
-
550 -
pF
-
65 -
ns
-
32 -
ns
-
190 -
ns
-
90 -
ns
-
0.75 1.3 V
-
47 -
ns
-
17 -
nC
9397 750 09631
Product data
Rev. 01 — 30 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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