PSMN006-20K Datasheet, PDF (4/12 Pages) NXP Semiconductors – TrenchMOS ultra low level FET

Philips Semiconductors
PSMN006-20K
TrenchMOS™ ultra low level FET
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
R_th(j-sp) thermal resistance from junction to solder point mounted on a metal clad board; Figure 4 - - 15 K/W
7.1 Transient thermal impedance
102
Zth(j-sp)
(K/W)
10
δ = 0.5
0.2
0.1
1 _0.05
0.02
single pulse
10-1
10-4
10-3
10-2
10-1
1
03ai62
P
δ
=
tp
T
tp
t
T
10
tp (s)
102
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 09631
Product data
Rev. 01 — 30 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
4 of 12