PSMN006-20K Datasheet, PDF (2/12 Pages) NXP Semiconductors – TrenchMOS ultra low level FET

Philips Semiconductors
PSMN006-20K
TrenchMOS™ ultra low level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
V_DS
I_D
P_tot
T_j
R_DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ T_j ≤ 150 °C
T_sp = 25 °C; V_GS = 4.5 V
T_sp = 25 °C
V_GS = 4.5 V; I_D = 5 A; T_j = 25 °C
V_GS = 2.5 V; I_D = 5 A; T_j = 25 °C
V_GS = 1.8 V; I_D = 5 A; T_j = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
drain-source voltage (DC)
I_D
drain current (DC)
V_GS
gate-source voltage
I_DM
peak drain current
P_tot
total power dissipation
25 °C ≤ T_j ≤ 150 °C
T_sp = 25 °C; V_GS = 4.5 V; Figure 2 and 3
T_sp = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_sp = 25 °C; Figure 1
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
I_S
source (diode forward) current (DC) T_sp = 25 °C
I_SM
peak source (diode forward) current T_sp = 25 °C; pulsed; t_p ≤ 10 µs
Typ
Max Unit
-
20
V
-
32
A
-
8.3
W
-
150
°C
4.2
5
mΩ
4.8
5.7
mΩ
5.7
8.2
mΩ
Min
Max Unit
-
20
V
-
32
A
-
±10
V
-
60
A
-
8.3
W
-
150
°C
−55
+150 °C
-
7.5
A
-
30
A
9397 750 09631
Product data
Rev. 01 — 30 May 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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