BUK78150-55A Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK78150-55A
TrenchMOS™ standard level FET
10
03nc22
ID
(A)
8
6
4
2
Tj = 150 ^OC
Tj = 25 ^OC
0
0
2
4
6
8
10
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
10
VGS
(V) ₉
8
7
6
5
4
3
2
1
0
0
VDD= 14 V
03nb87
VDD= 44 V
2
4 _{QG (nC)} 6
T_j = 25 °C; I_D = 5 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
60
03nc23
IS
(A)
50
40
30
Tj = 150 ^OC
20
Tj = 25 ^OC
10
0
0.0
0.5
1.0
1.5
2.0
2.5
VSD (V)
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07738
Product specification
Rev. 01 — 30 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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