BUK78150-55A Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
8. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS
V_GS(th)
drain-source breakdown
voltage
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
I_DSS
I_GSS
R_DSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 150 °C
T_j = −55 °C
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 150 °C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 5 A;
Figure 7 and 8
Dynamic characteristics
T_j = 25 °C
T_j = 150 °C
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
V_GS = 0 V; V_DS = 25 V;
f = 1 MHz; Figure 12
V_DD = 30 V; R_L = 2.7 Ω;
V_GS = 10 V; R_G = 5.6 Ω
BUK78150-55A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
55
−
−
V
50
−
−
V
2
3
4
V
1
−
−
V
−
−
4.4
V
−
0.05
10
µA
−
−
500
µA
−
2
100
nA
−
128
150
mΩ
−
−
278
mΩ
−
170
230
pF
−
54
65
pF
−
37
52
pF
−
3
−
ns
−
26
−
ns
−
8
−
ns
−
10
−
ns
9397 750 07738
Product specification
Rev. 01 — 30 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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