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BUK78150-55A Datasheet, PDF (2/13 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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Philips Semiconductors
BUK78150-55A
TrenchMOS⢠standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tsp = 25 °C; VGS = 10 V
Tsp = 25 °C
VGS = 10 V; ID = 5 A
Tj = 25 °C
Tj = 150 °C
Typ
Max Unit
â
55
V
â
5.5
A
â
8
W
â
150
°C
128
150
mâ¦
â
278
mâ¦
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max Unit
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
â
55
V
RGS = 20 kâ¦
â
55
V
â
±20
V
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
â
5.5
A
Tsp = 100 °C; VGS = 10 V; Figure 2
â
3.8
A
Tsp = 25 °C; pulsed; tp ⤠10 µs; Figure 3
â
22
A
Tsp = 25 °C; Figure 1
â
8
W
â55
+150 °C
â55
+150 °C
Source-drain diode
IDR
IDRM
reverse drain current (DC)
pulsed reverse drain current
Tsp = 25 °C
Tsp = 25 °C; pulsed; tp ⤠10 µs
â
5.5
A
â
22
A
Avalanche ruggedness
WDSS non-repetitive avalanche energy
unclamped inductive load; ID = 5 A;
VDS ⤠55 V; VGS = 10 V; RGS = 50 â¦;
starting Tsp = 25 °C
â
25
mJ
9397 750 07738
Product speciï¬cation
Rev. 01 â 30 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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