BUK78150-55A Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
Table 5: Characteristics…continued
T_j = 25 °C unless otherwise specified
Symbol Parameter
Source-drain diode
V_SD
source-drain (diode forward)
voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 5 A; V_GS = 0 V;
Figure 15
I_S = 10 A; dI_S/dt = −100 A/µs
V_GS = −10 V; V_DS = 30 V
BUK78150-55A
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
−
0.85
1.2
V
−
32
−
ns
−
50
−
nC
30
03nb91
ID
(A)
VGS (V) = 11 12 14 16
25
20
200
RDSon
(mΩ)
180
03nb90
20
9.5
15
8.5
10
7.5
6.5
5
5.5
0
4.5
0
2
4
6
8
10
VDS (V)
160
140
120
100
80
5
10
15 _{VGS (V)} 20
T_j = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 5 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
350
RDSon
5.5
6.5
6
7
(mΩ)
300
03nb92
8 VGS (V) = 10
250
200
150
100
0
T_j = 25 °C
5
10
15 _{ID (A)} 20
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
2.2
a
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -20 20
03nc24
60 100 140 180
Tj (oC)
a = -------^R----^D----^S--^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07738
Product specification
Rev. 01 — 30 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
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