English
Language : 

BUK7610-100B_15 Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
10
VGS
(V)
8
6
03ng72
VDD = 14 V
VDD = 80 V
4
2
0
0
20
40
60
80
QG (nC)
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
BUK7610-100B
N-channel TrenchMOS standard level FET
7000
C
(pF)
Ciss
6000
03ng78
5000
4000
Coss
3000
2000
Crss
1000
010- 1
1
10
102
VDS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
IS
(A)
80
03ng71
60
40
20
0
0.0
Tj = 175 °C
0.2
0.4
0.6
Tj = 25 °C
0.8
1.0
VSD (V)
Fig. 15. Reverse diode current as a function of reverse diode voltage; typical value
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
8 / 12