BUK7610-100B_15 Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
10
V_GS
(V)
8
6
03ng72
V_DD = 14 V
V_DD = 80 V
4
2
0
0
20
40
60
80
Q_G (nC)
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
BUK7610-100B
N-channel TrenchMOS standard level FET
7000
C
(pF)
C_iss
6000
03ng78
5000
4000
C_oss
3000
2000
C_rss
1000
010_{- 1}
1
10
10²
V_DS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
I_S
(A)
80
03ng71
60
40
20
0
0.0
T_j = 175 °C
0.2
0.4
0.6
T_j = 25 °C
0.8
1.0
V_SD (V)
Fig. 15. Reverse diode current as a function of reverse diode voltage; typical value
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
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