BUK7610-100B_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 40 A; V_GS = 0 V; T_j = 25 °C; Fig. 15
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs;
Q_r
recovered charge
V_GS = -10 V; V_DS = 30 V; T_j = 25 °C
Min Typ Max Unit
-
0.85 1.2 V
-
69
-
ns
-
212 -
nC
350
I_D
(A)
300
250
20
10
8
03ng76
7
6.5
11
R_DSon
(mΩ)
10
03ng75
200
5.5
9
150
100
8
50
V_GS = 4.5 V
0
0
2
4
6
8
10
V_DS (V)
7
5
10
15
20
V_GS (V)
Fig. 5. Output characteristics: drain current as a
Fig. 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^{- 1}
I_D
(A)
10^{- 2}
03aa35
min typ max
100
g_fs
(S)
80
03ng73
10^{- 3}
60
10^{- 4}
40
10^{- 5}
20
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
0
0
20
40
60
80
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
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