BUK7610-100B_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
Symbol
Parameter
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
T_mb = 25 °C; Fig. 2
T_mb = 25 °C
[1]
[2]
pulsed; t_p ≤ 10 µs; T_mb = 25 °C
I_D = 75 A; V_sup ≤ 100 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
120
I_D
(A)
03ng70
Capped at 75 A due to package
120
P_der
(%)
80
80
Min Max Unit
-
300 W
-55 175 °C
-55 175 °C
-
110 A
-
75
A
-
438 A
-
629 mJ
03na19
40
40
00
50
100
150
200
T_mb (°C)
Fig. 1. Normalized continuous drain current as a
function of mounting base temperature
0
0
50
100
150
200
T_mb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
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