BUK7610-100B_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7610-100B
N-channel TrenchMOS standard level FET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
• Low conduction losses due to low on-state resistance
• Q101 compliant
• Suitable for standard level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
• 12 V, 24 V and 42 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1; Fig. 3 [1]
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 11; Fig. 12
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 25 A; V_DS = 80 V;
T_j = 25 °C; Fig. 13
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-
source avalanche
energy
I_D = 75 A; V_sup ≤ 100 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
100 V
-
-
75
A
-
-
300 W
-
8.6 10
mΩ
-
22
-
nC
-
-
629 mJ
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