BUK7610-100B_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
10³
I_D
(A)
10²
Limit R_DSon = V_DS/ I_D
t_p =10 µ s
100 µ s
003aag933
10
Capped at 75 A due to package
DC
1
1 ms
10 ms
100 ms
10^-1
1
10
10²
10³
V_DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 4
mounted on printed-circuit board ;
minimum footprint
Min Typ Max Unit
-
-
0.5 K/W
-
50
-
K/W
1
Z_th(j-mb)
(K/W)
δ = 0.5
10^{- 1}
10^{- 2}
0.2
0.1
0.05
0.02
03ng69
P
δ=
t_p
T
Single Shot
10^{- 3}
10^{- 6}
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
t_p
t
T
10^{- 1}
1
t_p (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
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