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BUK7610-100B_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
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NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 11; Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11; Fig. 12
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 14
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
LD
internal drain
from drain lead 6 mm from package to
inductance
centre of die ; Tj = 25 °C
from upper edge of drain mounting
base to centre of die ; Tj = 25 °C
LS
BUK7610-100B
internal source
inductance
from source lead to source bond pad ;
Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
Min Typ Max Unit
100 -
-
V
89
-
-
V
1
-
-
V
2
3
4
V
-
-
4.4 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
2
100 nA
-
8.6 10
mΩ
-
-
25
mΩ
-
80
-
nC
-
18
-
nC
-
22
-
nC
-
5080 6773 pF
-
677 812 pF
-
168 230 pF
-
33
-
ns
-
45
-
ns
-
120 -
ns
-
36
-
ns
-
4.5 -
nH
-
2.5 -
nH
-
7.5 -
nH
© NXP B.V. 2012. All rights reserved
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