BUK7610-100B_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7610-100B
N-channel TrenchMOS standard level FET
100
I_D
(A)
80
03ng74
5
V_GS(th)
(V)
4
max
03aa32
60
3
typ
40
T_j = 175 °C
20
2
min
1
T_j = 25 °C
0
0
2
4
6
V_GS (V)
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
- 60
0
60
120
180
T_j (°C)
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
13
RDSon
(mΩ)
03ng77
2.8
V_GS = 6 V
a
12
6.5
9
2.1
7
11
8
10
1.4
10
0.7
9
03ng41
8
0
50
100
150
200
I_D (A)
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7610-100B
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
© NXP B.V. 2012. All rights reserved
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