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BTA2008W-800D Datasheet, PDF (8/15 Pages) NXP Semiconductors – 3Q Hi-Com Triac
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NXP Semiconductors
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 9
IL
latching current
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 10
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 10
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 10
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 11
VT
on-state voltage
IT = 0.85 A; Tj = 25 °C; Fig. 12
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 13
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 13
ID
off-state current
VD = 800 V; Tj = 125 °C
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C;
IT(RMS) = 0.8 A; dVcom/dt = 10 V/µs;
gate open circuit
BTA2008W-800D
3Q Hi-Com Triac
Min Typ Max Unit
0.25 -
5
mA
0.25 -
5
mA
0.25 -
5
mA
-
-
10
mA
-
-
20
mA
-
-
10
mA
-
-
10
mA
-
1.35 1.6 V
-
0.9 1.5 V
0.2 0.3 -
V
-
0.1 0.5 mA
200 -
-
V/µs
0.5 -
-
A/ms
BTA2008W-800D
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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