BTA2008W-800D Datasheet, PDF (1/15 Pages) NXP Semiconductors – 3Q Hi-Com Triac

BTA2008W-800D
3Q Hi-Com Triac
14 August 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT223 surface mountable
plastic package. This "series D" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
and logic ICs including microcontrollers.
2. Features and benefits
• 3Q technology for improved noise immunity
• Direct gate triggering from low power drivers and logic ICs
• High commutation capability with very sensitive gate
• High voltage capability
• Planar passivated for voltage ruggedness and reliability
• Surface mountable package
• Triggering in three quadrants only
• Very sensitive gate for easy logic level triggering
3. Applications
• Low power motor controls
• Small inductive loads e.g. solenoids, door locks, water valves
• Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DRM
repetitive peak off-
state voltage
I_TSM
non-repetitive peak on- full sine wave; T_j(init) = 25 °C;
state current
t_p = 20 ms; Fig. 4; Fig. 5
T_j
junction temperature
I_T(RMS)
RMS on-state current full sine wave; T_sp ≤ 111 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I_GT
gate trigger current
V_D = 12 V; I_T = 0.1 A; T2+ G+;
T_j = 25 °C; Fig. 9
Min Typ Max Unit
-
-
800 V
-
-
9
A
-
-
125 °C
-
-
0.8 A
0.25 -
5
mA
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