BTA2008W-800D Datasheet, PDF (2/15 Pages) NXP Semiconductors – 3Q Hi-Com Triac

NXP Semiconductors
BTA2008W-800D
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V_D = 12 V; I_T = 0.1 A; T2+ G-;
T_j = 25 °C; Fig. 9
V_D = 12 V; I_T = 0.1 A; T2- G-;
T_j = 25 °C; Fig. 9
Dynamic characteristics
dV_D/dt
rate of rise of off-state
voltage
V_DM = 536 V; T_j = 125 °C; (V_DM = 67%
of V_DRM); exponential waveform; gate
open circuit
dI_com/dt
rate of change of
commutating current
V_D = 400 V; T_j = 125 °C;
I_T(RMS) = 0.8 A; dV_com/dt = 10 V/µs;
gate open circuit
Min Typ
0.25 -
Max Unit
5
mA
0.25 -
5
mA
200 -
-
V/µs
0.5 -
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
T1
main terminal 1
4
2
T2
main terminal 2
3
G
gate
123
4
mb
mounting base; connected to
main terminal 2
SC-73 (SOT223)
Graphic symbol
T2
T1
G
sym051
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA2008W-800D
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
BTA2008W-800D
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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