BTA2008-1000D Datasheet, PDF (8/13 Pages) NXP Semiconductors – 3Q Hi-Com Triac

NXP Semiconductors
BTA2008-1000D
3Q Hi-Com Triac
3
I_GT
I_GT(25°C)
2
(1)
(2)
(3)
1
003aaa959
3
I_L
I_L(25°C)
2
1
003aak510
0
- 50
0
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
(3)
(2)
(1)
50
100 _{Tj (°C)} 150
0
-50
0
50
100
150
T_j (°C)
Fig. 8. Normalized latching current as a function of
junction temperature
Fig. 7. Normalized gate trigger current as a function of
junction temperature
3
I_H
I_H(25°C)
003aak511
1
I_T
(A)
0.8
003aac114
2
0.6
0.4
(1)
(2) (3)
1
0.2
0
-50
0
50
100
150
T_j (°C)
Fig. 9. Normalized holding current as a function of
junction temperature
0
0
0.5
1
1.5
2
V_T (V)
V_o = 0.835 V; R_s = 0.50 Ω
(1) T_j = 125 °C; typical values
(2) T_j = 125 °C; maximum values
(3) T_j = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
BTA2008-1000D
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
8 / 13