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BTA2008-1000D Datasheet, PDF (2/13 Pages) NXP Semiconductors – 3Q Hi-Com Triac
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NXP Semiconductors
BTA2008-1000D
3Q Hi-Com Triac
Symbol
Parameter
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 670 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 125 °C;
IT(RMS) = 0.8 A; dVcom/dt = 1 V/µs; gate
open circuit
Min Typ
0.25 -
Max Unit
5
mA
0.25 -
5
mA
-
150 -
V/µs
1
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T2
main terminal 2
2
G
gate
3
T1
main terminal 1
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
T2
T1
G
sym051
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA2008-1000D
TO-92
BTA2008-1000D/L01 TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
SOT54
7. Marking
Table 4. Marking codes
Type number
BTA2008-1000D
BTA2008-1000D/L01
Marking code
200810D
BTA2008-1000D
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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