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| BTA2008-1000D Datasheet, PDF (3/13 Pages) NXP Semiconductors – 3Q Hi-Com Triac | |||
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NXP Semiconductors
BTA2008-1000D
3Q Hi-Com Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tlead ⤠70 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
dIT/dt
rate of rise of on-state current IT = 1.5 A; IG = 20 mA; dIG/dt = 0.2 A/µs
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
-
1000 V
-
0.8 A
-
9
A
-
9.9 A
-
0.41 A2s
-
100 A/µs
-
1
A
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
12
I T(RMS)
(A)
10
8
6
4
2
003aac117
1
IT(RMS)
(A)
0.8
0.6
0.4
0.2
003aac115
010-2
10-1
1
10
surge duration (s)
f = 50 Hz; Tlead = 70 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
0
-50
0
50
100
150
Tlead (°C)
Fig. 2. RMS on-state current as a function of lead
temperature; maximum values
BTA2008-1000D
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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