English
Language : 

BTA2008-1000D Datasheet, PDF (1/13 Pages) NXP Semiconductors – 3Q Hi-Com Triac
BTA2008-1000D
3Q Hi-Com Triac
11 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic
package. This "series D" triac balances the requirements of commutation performance
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs
including microcontrollers.
2. Features and benefits
• 3Q technology for improved noise immunity
• Direct gate triggering from low power drivers and logic ICs
• High commutation capability with very sensitive gate
• High voltage capability
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
• Very sensitive gate for easy logic level triggering
3. Applications
• Low power motor controls
• Small inductive loads e.g. solenoids, door locks, water valves
• Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
Tj
junction temperature
IT(RMS)
RMS on-state current full sine wave; Tlead ≤ 70 °C; Fig. 1;
Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
1000 V
-
-
9
A
-
-
125 °C
-
-
0.8 A
0.25 -
5
mA
Scan or click this QR code to view the latest information for this product