BFU910F_15 Datasheet, PDF (8/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
11. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
12. Abbreviations
Table 10. Abbreviations
Acronym
Description
DBS
Direct Broadcast Satellite
K_u band
NPN
K-under band
Negative-Positive-Negative
SiGe
Silicon Germanium
13. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BFU910F v.2
Modifications
20150116
Product data sheet
-
BFU910F v.1
• The status of this document has been changed to “Product data sheet”.
• The title has been changed to “NPN wideband silicon germanium RF transistor”.
• Section 1.1 on page 1: the wording of this section has been changed.
• Table 1 on page 1: Some changes have been made.
• Table 6 on page 3: The maximum value for V_CE,open base has been changed.
• Table 7 on page 3: The typical value for V_CE has been changed.
• Table 9 on page 4: the conditions for V_(BR)CBO and V_(BR)CEO have been changed.
• Figure 5 on page 6: the figure has been added.
BFU910F v.1
20141128
Preliminary data sheet
-
-
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
8 of 11