BFU910F_15 Datasheet, PDF (6/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor

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9.1 Graphs
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Fig 2.
f = 12 GHz; V_CE = 2 V; T_amb = 25 C.
Minimum noise figure and associated gain as
function of collector current; typical values









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Fig 3.
I_C = 6 mA; V_CE = 2 V; T_amb = 25 C.
Minimum noise figure and associated gain as
function of frequency; typical values

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V_CE = 2 V; T_amb = 25 C.
(1) I_C = 6 mA
(2) I_C = 10 mA
Fig 4. Minimum noise figure as a function of
frequency; typical values

        
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V_CE = 2 V; T_amb = 25 C.
Fig 5. DC current gain as a function of collector
current; typical values
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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