BFU910F_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

BFU910F
NPN wideband silicon germanium RF transistor
Rev. 2 — 16 January 2015
Product data sheet
1. Product profile
1.1 General description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic,
4-pin dual-emitter SOT343F package.
The BFU910F is suitable for small signal applications up to 20 GHz.
1.2 Features and benefits
 Low noise high gain microwave transistor
 Minimum noise figure (NF_min) = 0.65 dB at 12 GHz
 Maximum stable gain 14.2 dB at 12 GHz
 90 GHz f_T SiGe technology
1.3 Applications
 K_u band DBS Low-Noise blocks
1.4 Quick reference data
Table 1. Quick reference data
T_amb = 25 C unless otherwise specified
Symbol Parameter
Conditions
V_CE
collector-emitter voltage
R_BE  1 M
I_C
collector current
P_tot
total power dissipation
T_sp  90 C
h_FE
DC current gain
I_C = 6 mA; V_CE = 2 V
C_CBS collector-base capacitance V_CB = 2 V; f = 1 MHz
f_T
transition frequency
I_C = 6 mA; V_CE = 2 V
MSG maximum stable gain
I_C = 6 mA; V_CE = 2 V;
f = 12 GHz
NF_min minimum noise figure
I_C = 6 mA; V_CE = 2 V;
f = 12 GHz; _S = _opt
G_ass
associated gain
I_C = 6 mA; V_CE = 2 V;
f = 12 GHz; _S = _opt
P_L(1dB) output power at 1 dB
gain compression
I_C = 10 mA; V_CE = 2 V;
f = 12 GHz; Z_S = Z_L = 50 
[1] T_sp is the temperature at the solder point of the emitter lead.
Min Typ Max Unit
- 2.0 3.0 V
- 10 15 mA
[1] _-
-
300 mW
- 1900 -
- 35 - fF
- 90 - GHz
- 14.2 - dB
- 0.65 - dB
- 13.0 - dB
- 2 - dBm