BFU910F_15 Datasheet, PDF (3/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
6. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_CB
collector-base voltage
open emitter
V_CE
collector-emitter voltage open base
shorted base
V_EB
emitter-base voltage
T_stg
storage temperature
open collector
Min Max Unit
- 9.5 V
- 2.0 V
- 9.5 V
- 1.5 V
65 +150 C
7. Recommended operating conditions
Table 7.
Symbol
V_CE
V_EB
I_C
P_i
T_j
P_tot
Characteristics
Parameter
collector-emitter voltage
emitter-base voltage
collector current
input power
junction temperature
total power dissipation
Conditions
R_BE  1 M
open collector
Z_S = 50 
T_sp  90 C
[1] T_sp is the temperature at the solder point of the emitter lead.
8. Thermal characteristics
Min Typ Max Unit
-
2.0 3.0 V
-
-
1.0 V
-
-
15
mA
-
-
0
dBm
40 -
+150 C
[1] _-
-
300 mW
Table 8.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ Unit
[1][2] _{202 K/W}
[1] T_sp is the temperature at the solder point of the collector lead.
T_sp has the following relation to the ambient temperature T_amb: T_sp = T_amb + P  R_th(sp-amb)
with P the power dissipation and R_th(sp-amb) the thermal resistance between the solder point and ambient.
R_th(sp-amb) is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.
[2] Based on simulation.
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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