BFU910F_15 Datasheet, PDF (2/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol







PEE
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFU910F
-
plastic surface-mounted flat pack package; reverse pinning;
4 leads
Version
SOT343F
4. Marking
Table 4. Marking
Type number
BFU910F
Marking
F1*
Description
* = t : made in Malaysia
* = w : made in China
5. Design support
Table 5. Available design support
Download from the BFU910F product information page on http://www.nxp.com.
Support item
Available
Remarks
Device models for Agilent EEsof EDA ADS Q1 2015
Based on Mextram device model.
SPICE model
Q1 2015
Based on Gummel-Poon device
model.
S-parameters
yes
Noise parameters
yes
Solder pattern
yes
Application notes
yes
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 January 2015
© NXP B.V. 2015. All rights reserved.
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