BFU910F_15 Datasheet, PDF(4/11 Page) NXP Semiconductors – NPN wideband silicon germanium RF transistor

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BFU910F_15 Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor

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NXP Semiconductors

BFU910F

NPN wideband silicon germanium RF transistor

3WRW

P:

DDD

7VSÂ&

Fig 1. Power derating curve

9. Characteristics

Table 9. Characteristics

Tamb = 25 ï°C unless otherwise specified

Symbol Parameter

V(BR)CBO collector-base breakdown voltage

V(BR)CEO collector-emitter breakdown voltage

IC

collector current

hFE

DC current gain

CCES

CEBS

CCBS

fT

MSG

collector-emitter capacitance

emitter-base capacitance

collector-base capacitance

transition frequency

maximum stable gain

Conditions

IC = 10 ïA; IE = 0 ïA

IC = 10 ïA; IB = 0 ïA

IC = 1.5 mA; VCE = 1.5 V

IC = 6 mA; VCE = 2 V

VCE = 2 V; f = 1 MHz

VEB = 0.5 V; f = 1 MHz

VCB = 2 V; f = 1 MHz

IC = 5 mA; VCE = 2 V

f = 10.7 GHz; VCE = 2 V

IC = 6 mA

IC = 10 mA

f = 12 GHz; VCE = 2 V

IC = 6 mA

IC = 10 mA

f = 12.75 GHz; VCE = 2 V

IC = 6 mA

IC = 10 mA

Min Typ Max Unit

9.5 -

-

V

2.0 -

-

V

-

6 15 mA

1200 2200 3300

-

1900 -

-

215 -

fF

-

300 -

fF

-

35 -

fF

-

90 -

GHz

-

15.2 -

dB

-

15.5 -

dB

-

14.2 -

dB

-

14.5 -

dB

-

14.2 -

dB

-

14.5 -

dB

BFU910F

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 â 16 January 2015

Â© NXP B.V. 2015. All rights reserved.

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