 English |
|
|
|
|
|
|
|
| BFU910F_15 Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN wideband silicon germanium RF transistor | |||
| |||
| ◁ |
NXP Semiconductors
BFU910F
NPN wideband silicon germanium RF transistor
Table 9. Characteristics â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
ï¼s21ï¼2
insertion power gain
NFmin minimum noise figure
Gass
associated gain
PL(1dB) output power at 1 dB gain compression
IP3o
output third-order intercept point
Conditions
f = 10.7 GHz; VCE = 2 V
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V
IC = 6 mA
IC = 10 mA
f = 12.75 GHz; VCE = 2 V
IC = 6 mA
IC = 10 mA
f = 10.7 GHz; VCE = 2 V; ïS = ïopt
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V; ïS = ïopt
IC = 6 mA
IC = 10 mA
f = 12.75 GHz; VCE = 2 V; ïS = ïopt
IC = 6 mA
IC = 10 mA
f = 10.7 GHz; VCE = 2 V; ïS = ïopt
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V; ïS = ïopt
IC = 6 mA
IC = 10 mA
f = 12.75 GHz; VCE = 2 V; ïS = ïopt
IC = 6 mA
IC = 10 mA
f = 12 GHz; VCE = 2 V; ZS = ZL = 50 ï;
IC = 10 mA
f1 = 12.000 GHz; f2 = 12.025 GHz;
VCE = 2 V; ZS = ZL = 50 ï; IC = 10 mA
Min Typ Max Unit
-
13.0 -
dB
-
13.5 -
dB
-
12.0 -
dB
-
12.5 -
dB
-
12.0 -
dB
-
12.5 -
dB
-
0.6 -
dB
-
0.65 -
dB
-
0.65 0.85 dB
-
0.7 -
dB
-
0.65 -
dB
-
0.7 -
dB
-
13.5 -
dB
-
14.0 -
dB
-
13.0 -
dB
-
13.5 -
dB
-
13.0 -
dB
-
13.5 -
dB
-
2-
dBm
-
12.5 -
dBm
BFU910F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 16 January 2015
© NXP B.V. 2015. All rights reserved.
5 of 11
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese