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| TDA8580J Datasheet, PDF (7/28 Pages) NXP Semiconductors – Multi-purpose power amplifier | |||
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Philips Semiconductors
Multi-purpose power ampliï¬er
Preliminary speciï¬cation
TDA8580J
CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; fi = 1 kHz; RL = â; measured in test circuit of Fig.28; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supplies
VP
operating supply voltage
Iq(tot)
total quiescent current
Istb
standby current
VO
DC output voltage
VP(mute) low supply voltage mute
VI
DC input voltage
Control pins
8.0 14.4 24 V
â
140 170 mA
â
1
50 µA
â
7.0 â
V
6.0 7.0 8.0 V
â
4.0 â
V
STANDBY PIN (see Table 1)
V5(stb)
voltage at STANDBY pin for standby
condition
Vhys(5)(stb) hysteresis voltage at STANDBY pin note 1
for standby condition
V5(mute)
voltage at STANDBY pin for mute
condition
V13 < 0.8 V
V5(on)
voltage at STANDBY pin for on
condition
VP > 9 V; note 2
0
â
0.8 V
â
0.2 â
V
2.0 â
5.3 V
8.0 â
18 V
MUTE PIN (see Table 1)
V13(mute) voltage at MUTE pin for mute
condition
V5 = 5 V
V13(on)
voltage at MUTE pin for on condition V5 = 5 V
Diagnostic; output buffer (open-collector); see Figs 3, 4 and 5
0
â
2.5 â
0.8 V
5.3 V
VOL
ILI
CD
Tj(diag)
LOW-level output voltage
leakage current
clip detector
junction temperature for high
temperature warning
Isink = 1 mA
VDIAG = 14.4 V
VDIAG < 0.8 V
VDIAG < 0.8 V
â
0.2 0.8 V
â
â
1
µA
1
2
4
%
â
145 â
°C
Stereo BTL application; see Figs 6, 7, 10, 11, 14, 15, 18, 19, 21, 22, 23, 24, 26 and 28
THD
total harmonic distortion
Po
output power
Gv
voltage gain
fi = 10 kHz; Po = 1 W; RL = 4 â¦;
â
ï¬lter: 22 Hz < f < 30 kHz
fi = 1 kHz; Po = 1 W; VP = 14.4 V; â
RL = 4 â¦
fi = 1 kHz; Po = 10 W; VP = 24 V; â
RL = 8 â¦
THD = 0.5%; VP = 14.4 V; RL = 4 ⦠14
THD = 0.5%; VP = 24 V; RL = 8 ⦠21
THD = 10%; VP = 14.4 V; RL = 4 ⦠18
THD = 10%; VP = 24 V; RL = 8 ⦠28
Vo(rms) = 3 V
31
0.2 0.3 %
0.05 0.1 %
0.02 0.05 %
15 â
W
23 â
W
20 â
W
30 â
W
32 33 dB
2000 Apr 18
7
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