TDA8580J Datasheet, PDF (20/28 Pages) NXP Semiconductors – Multi-purpose power amplifier

Philips Semiconductors
Multi-purpose power amplifier
Preliminary specification
TDA8580J
handbook, full pagewidth
VinR
220 nF
IN1 7
IN2 8
TDA8580J
Vpx
100 µF
10 V
IN5 12
VinR
220 nF
IN3 10
30 kΩ
BUFFER
220 nF _{IN4 11}
VinL
MUTE 13
STANDBY 5
Vswitching
(9 V typical)
R1
(1)
R2
SW1
4.7 µF
INTERFACE
VP
1000 µF
16/40 V
100 nF
VP1 VP2
3
15
60
kΩ
−
V/I
+
60
kΩ
+
V/I
−
Vpx
45
kΩ
45
kΩ
60
kΩ
−
V/I
+
60
kΩ
+
V/I
−
45 kΩ
−
OA
+
+
OA
−
45 kΩ
1 OUT1+
+
−
4 OUT2−
4 or 8 Ω
9 BUFFER
2Ω
BUFFER
45 kΩ
−
OA
+
+
OA
−
45 kΩ
DIAGNOSTIC
14 OUT3−
220 nF
+
4 or 8 Ω
−
−
17 OUT4+ ⁺
4 or 8 Ω
6 DIAG
+5 V
10
kΩ
2
PGND1
16
PGND2
MGU076
(1) R1 and R2 values depend on V_switching applied; the value of R1 and R2 connected in parallel should be minimum 10 kΩ.
Fig.30 Dual single-ended and one bridge-tied load application; V_P ≤ 18 V.
2000 Apr 18
20