TDA8580J Datasheet, PDF (13/28 Pages) NXP Semiconductors – Multi-purpose power amplifier

Philips Semiconductors
Multi-purpose power amplifier
Preliminary specification
TDA8580J
40
handbook, halfpage
Pd
(W)
30
20
10
0
0
4
MGS711
8
12 _{Po (W)} 16
f_i = 1 kHz; R_L = 4 Ω; V_P = 24 V; 4 channel driven.
Fig.17 Power dissipation as a function of output
power; SE mode.
40
handbook, halfpage
Po
(W)
30
MGS712
20
(1)
(2)
10
0
8
12
16 _{VP (V)} 20
f_i = 1 kHz; R_L = 4 Ω; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%.
Fig.18 Output power as a function of supply
voltage; BTL mode.
40
handbook, halfpage
Po
(W)
30
MGS713
20
(1)
10
(2)
0
8
12
16
20 _{VP (V)} 24
f_i = 1 kHz; R_L = 8 Ω; 2 channel driven.
(1) THD = 10%.
(2) THD = 0.5%
Fig.19 Output power as a function of supply
voltage; BTL mode.
2000 Apr 18
16
handbook, halfpage
Po
(W)
12
MGS714
8
(1)
(2)
4
0
8
12
16
20 _{VP (V)} 24
f_i = 1 kHz; R_L = 4 Ω; 2 channel driven.
(1) THD = 0.5%.
(2) THD = 10%
Fig.20 Output power as a function of supply
voltage; SE mode.
13