TDA8580J Datasheet, PDF (14/28 Pages) NXP Semiconductors – Multi-purpose power amplifier

Philips Semiconductors
Multi-purpose power amplifier
Preliminary specification
TDA8580J
34
handbook, halfpage
Gv
(dB)
33
MGS717
32
31
30
10
10²
10³
10⁴ _{fi (Hz)} 10⁵
C_i = 470 nF.
Fig.21 Gain as a function of input frequency;
BTL mode.
0.8
∆ Po
(W)
0.4
MGS715
0
− 0.4
− 0.8
10
10²
10³
10⁴ _{fi (Hz)} 10⁵
THD = 0.5%; R_L = 4 Ω; V_P = 14.4 V.
Fig.22 Power bandwidth as a function of
frequency; BTL mode.
0.8
handbook, halfpage
∆ Po
(W)
0.4
MGS716
0
− 0.4
− 0.8
10
10²
10³
10⁴ _{fi (Hz)} 10⁵
THD = 0.5%; R_L = 8 Ω; V_P = 24 V.
Fig.23 Power bandwidth as a function of
frequency; BTL mode.
2000 Apr 18
handbo_αok^−_c,_s5h⁰alfpage
(dB)
− 54
MGS718
− 58
− 62
(1)
− 66
(2)
− 70
10
10²
10³
10⁴ _{fi (Hz)} 10⁵
P_o = 2 W; R_L = 4 Ω; V_P = 14.4 V.
(1) Channels 3 and 4 to channels 1 and 2.
(2) Channels 1 and 2 to channels 3 and 4.
Fig.24 Channel separation as a function of
frequency; BTL mode.
14