TDA8580J Datasheet, PDF (12/28 Pages) NXP Semiconductors – Multi-purpose power amplifier

Philips Semiconductors
Multi-purpose power amplifier
Preliminary specification
TDA8580J
10²
handbook, halfpage
THD
(%)
10
MGS707
(2)
(3) ₍₁₎
1
(1)
10^−1
(2)
10^−2
10^−1
(3)
1
10 _{Po (W)} 10²
R_L = 4 Ω; V_P = 24 V; 4 channel driven.
(1) f_i = 10 kHz.
(2) f_i = 1 kHz.
(3) f_i = 100 Hz.
Fig.13 Total harmonic distortion as a function of
output power; SE mode.
handbook, ³h⁰alfpage
Pd
(W)
20
MGS708
10
0
0
10
20 _{Po (W)} 30
f_i = 1 kHz; R_L = 4 Ω; V_P = 14.4 V; 2 channel driven.
Fig.14 Power dissipation as a function of output
power; BTL mode.
40
handbook, halfpage
Pd
(W)
30
MGS709
20
10
0
0
10
20
30
40
Po (W)
16
handbook, halfpage
Pd
(W)
12
8
4
0
0
2
MGS710
4 _{Po (W)} 6
f_i = 1 kHz; R_L = 8 Ω; V_P = 24 V; 2 channel driven.
Fig.15 Power dissipation as a function of output
power; BTL mode.
f_i = 1 kHz; R_L = 4 Ω; V_P = 14.4 V; 4 channel driven.
Fig.16 Power dissipation as a function of output
power; SE mode.
2000 Apr 18
12