TDA8580J Datasheet, PDF (3/28 Pages) NXP Semiconductors – Multi-purpose power amplifier

Philips Semiconductors
Multi-purpose power amplifier
Preliminary specification
TDA8580J
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_P
I_q(tot)
I_stb
operating supply voltage
total quiescent current
standby supply current
Bridge-tied load application
G_v
voltage gain
P_o
output power
THD
total harmonic distortion
V_offset(DC) DC output offset voltage
V_no
SVRR
noise output voltage
supply voltage ripple rejection
Single-ended application
G_v
voltage gain
P_o
output power
V_offset(DC) DC output offset voltage
V_no
SVRR
noise output voltage
supply voltage ripple rejection
CONDITIONS
V_P = 14.4 V
V_P = 14.4 V
THD = 0.5%; V_P = 14.4 V; R_L = 4 Ω
THD = 0.5%; V_P = 24 V; R_L = 8 Ω
f_i = 1 kHz; P_o = 1 W; V_P = 14.4 V;
R_L = 4 Ω
f_i = 1 kHz; P_o = 10 W; V_P = 24 V;
R_L = 8 Ω
V_P = 14.4 V; mute condition; R_L = 4 Ω
V_P = 14.4 V; on condition
R_s = 1 kΩ; V_P = 14.4 V
f_i = 1 kHz; V_ripple(p-p) = 2 V; on or mute
condition; R_s = 0 Ω
THD = 0.5%; V_P = 14.4 V; R_L = 4 Ω
THD = 0.5%; V_P = 24 V; R_L = 4 Ω
V_P = 14.4 V; mute condition; R_L = 4 Ω
V_P = 14.4 V; on condition
R_s = 1 kΩ; V_P = 14.4 V
f_i = 1 kHz; V_ripple(p-p) = 2 V; on or mute
condition; R_s = 0 Ω
MIN.
8.0
−
−
31
14
21
−
−
−
−
−
50
25
3.8
10.5
−
−
−
40
TYP.
14.4
140
1
32
15
23
0.05
0.02
10
0
100
60
26
4.0
11.5
10
0
80
45
MAX. UNIT
24
V
170 mA
50
µA
33
dB
−
W
−
W
0.1 %
0.05 %
20
mV
140 mV
150 µV
−
dB
27
dB
−
W
−
W
20
mV
100 mV
120 µV
−
dB
2000 Apr 18
3