PSMN059-150Y_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
3
a
2
1
03al51
150
R_DSon ^4.5
5
(mΩ)
120
90
60
30
003aab752
5.5
V_GS (V) = 6
7
10
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
0
0
10
20
30
40
50
I_D (A)
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 11. Gate charge waveform definitions
10
V_GS
(V)
8
I_D = 12 A
T_j = 25 °C
6
30
75
4
003aab754
V_DS = 120 V
2
0
0
7.5
15
22.5
30
Q_G (nC)
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
PSMN059-150Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 October 2013
© NXP N.V. 2013. All rights reserved
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