PSMN059-150Y_15 Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
3 October 2013
Product data sheet
1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
• Higher operating power due to low thermal resistance
• Suitable for high frequency applications due to fast switching characteristics
3. Applications
• Class D amplifier
• DC-to-DC converters
• Motion control
• Switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V; Fig. 1; Fig. 3
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 12 A; T_j = 25 °C;
resistance
Fig. 9; Fig. 10
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 10 V; I_D = 12 A; V_DS = 75 V;
Fig. 11; Fig. 12
Min Typ Max Unit
-
-
150 V
-
-
43
A
-
-
113 W
-
46
59
mΩ
-
9.1 -
nC
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