PSMN059-150Y_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
10³
I_D
(A)
10²
10
1
Limit R_DSon = V_DS / I_D
DC
003aab749
t_p = 10 µs
100 µs
1 ms
10 ms
100 ms
10^{- 1}
1
10
10²
10³
V_DS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
mounted on a printed-circuit board;
vertical in still air; Fig. 4
Min Typ Max Unit
-
-
1.1 K/W
10
Z_th(j-mb)
(K/W)
003aac268
1
d = 0.5
10^{- 1}
0.2
0.1
0.05
0.02
10^{- 2}
single shot
10^{- 3}
10^{- 6}
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
P
δ=
t_p
T
t_p
t
T
10^{- 1}
1
t_p (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN059-150Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 October 2013
© NXP N.V. 2013. All rights reserved
4 / 12