PSMN059-150Y_15 Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
t_rr
Q_r
Parameter
Conditions
reverse recovery time I_S = 12 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
V_DS = 30 V
recovered charge
I_S = 12 A; dI_S/dt = -100 A/µs; V_GS = 0 V
Min Typ Max Unit
-
67
-
ns
-
226 -
nC
50
I_D
(A)
40
003aab751
10 7 6
60
I_D
(A)
V_DS > I_D × R_DSon
45
003aab753
30
V_GS (V) = 5.5
30
20
T_j = 150 °C
25 °C
5
15
10
4.5
0
0
1
2
3
4
5
V_DS (V)
0
0
2
4
6
8
V_GS (V)
T_j = 25 °C
T_j = 25 °C and 150 °C; V_DS > I_D x R_DSon
Fig. 5. Output characteristics: drain current as a
Fig. 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
5
V_GS(th)
(V)
4
003aab852
max
10^{- 1}
I_D
(A)
10^{- 2}
003aab853
min typ max
3
typ
10^{- 3}
2
min
10^{- 4}
1
10^{- 5}
0
- 60
0
60
120
160
T_j (°C)
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 7. Gate-source threshold voltage as a function of Fig. 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PSMN059-150Y
Product data sheet
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3 October 2013
© NXP N.V. 2013. All rights reserved
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