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PSMN059-150Y_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET
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NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 7; Fig. 8
ID = 1 mA; VDS = VGS; Tj = 150 °C;
Fig. 7; Fig. 8
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 7; Fig. 8
IDSS
drain leakage current VDS = 120 V; VGS = 0 V; Tj = 25 °C
VDS = 120 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 12 A; Tj = 25 °C;
resistance
Fig. 9; Fig. 10
VGS = 10 V; ID = 12 A; Tj = 150 °C;
Fig. 9; Fig. 10
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 12 A; VDS = 75 V; VGS = 10 V;
Fig. 11; Fig. 12
QGD
gate-drain charge
VGS(pl)
gate-source plateau
voltage
ID = 12 A; VDS = 75 V; Fig. 11; Fig. 12
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 13
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 75 V; RL = 3 Ω; VGS = 10 V;
RG(ext) = 5.6 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 12 A; VGS = 0 V; Tj = 25 °C; Fig. 14
PSMN059-150Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 October 2013
Min Typ Max Unit
150 -
-
V
133 -
-
V
2
3
4
V
1
-
-
V
-
-
4.4 V
-
-
1
µA
-
-
100 µA
-
-
100 nA
-
-
100 nA
-
46
59
mΩ
-
101 135 mΩ
-
1.1 -
Ω
-
27.9 -
nC
-
6.3 -
nC
-
9.1 -
nC
-
4.8 -
V
-
1529 -
pF
-
208 -
pF
-
66
-
pF
-
14.2 -
ns
-
42
-
ns
-
54.2 -
ns
-
11.1 -
ns
-
0.9 1.2 V
© NXP N.V. 2013. All rights reserved
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