PSMN059-150Y_15 Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
mb
2
S
source
3
S
source
4
G
mb
D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN059-150Y
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN059-150Y
Marking code
059150
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 150 °C
V_DGR
drain-gate voltage
T_j ≥ 25 °C; T_j ≤ 150 °C; R_GS = 20 Ω
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1; Fig. 3
V_GS = 10 V; T_mb = 100 °C; Fig. 1
I_DM
peak drain current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; Fig. 3
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
PSMN059-150Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 October 2013
Min Max Unit
-
150 V
-
150 V
-20 20
V
-
43
A
-
27.7 A
-
129 A
-
113 W
-55 150 °C
© NXP N.V. 2013. All rights reserved
2 / 12