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| PSMN059-150Y_15 Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS SiliconMAX standard level FET | |||
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NXP Semiconductors
PSMN059-150Y
N-channel TrenchMOS SiliconMAX standard level FET
Symbol
Parameter
Tj
junction temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
VGS = 10 V; Tj(init) = 25 °C; ID = 12.1 A;
Vsup ⤠150 V; unclamped; tp = 0.21 ms;
RGS = 50 Ω
120
Ider
(%)
80
003aac023
120
Pder
(%)
80
Min Max Unit
-55 150 °C
-
52
A
-
208 A
-
255 mJ
003aab937
40
40
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized continuous drain current as a
function of mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of solder point temperature
PSMN059-150Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 October 2013
© NXP N.V. 2013. All rights reserved
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