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| BFU520Y_15 Datasheet, PDF (6/20 Pages) NXP Semiconductors – Dual NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor
Table 9. Characteristics â¦continued
Tamb = 25 ï°C unless otherwise specified
Symbol Parameter
Gass
associated gain
PL(1dB) output power at 1 dB gain compression
IP3o
output third-order intercept point
Conditions
f = 433 MHz; VCE = 8 V; ïS = ïopt
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V; ïS = ïopt
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V; ïS = ïopt
IC = 1 mA
IC = 5 mA
IC = 10 mA
f = 433 MHz; VCE = 8 V; ZS = ZL = 50 ï
IC = 5 mA
IC = 10 mA
f = 900 MHz; VCE = 8 V; ZS = ZL = 50 ï
IC = 5 mA
IC = 10 mA
f = 1800 MHz; VCE = 8 V; ZS = ZL = 50 ï
IC = 5 mA
IC = 10 mA
f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;
ZS = ZL = 50 ï
IC = 5 mA
IC = 10 mA
f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;
ZS = ZL = 50 ï
IC = 5 mA
IC = 10 mA
f1 = 1800 MHz; f2 = 1801 MHz;
VCE = 8 V; ZS = ZL = 50 ï
IC = 5 mA
IC = 10 mA
[1] If K > 1 then Gp(max) is the maximum power gain. If K ï¼ 1 then Gp(max) = MSG.
Min Typ Max Unit
- 25 - dB
- 24 - dB
- 24 - dB
- 17 - dB
- 18 - dB
- 18 - dB
- 10.5 - dB
- 12 - dB
- 12.5 - dB
-1-
-6-
dBm
dBm
-2-
-7-
dBm
dBm
-4-
- 8.5 -
dBm
dBm
- 10 -
- 16 -
dBm
dBm
- 11 -
- 17 -
dBm
dBm
- 14 -
- 18 -
dBm
dBm
BFU520Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 20 February 2014
© NXP B.V. 2014. All rights reserved.
6 of 20
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