BFU520Y_15 Datasheet, PDF (5/20 Pages) NXP Semiconductors – Dual NPN wideband silicon RF transistor

NXP Semiconductors
Table 9. Characteristics …continued
T_amb = 25 C unless otherwise specified
Symbol Parameter
G_p(max) maximum power gain
s₂₁²
insertion power gain
NF_min minimum noise figure
BFU520Y
Dual NPN wideband silicon RF transistor
Conditions
f = 433 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 900 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 1800 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 433 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 900 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 1800 MHz; V_CE = 8 V
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 433 MHz; V_CE = 8 V; _S = _opt
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 900 MHz; V_CE = 8 V; _S = _opt
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
f = 1800 MHz; V_CE = 8 V; _S = _opt
I_C = 1 mA
I_C = 5 mA
I_C = 10 mA
Min Typ Max Unit
[1]
- 16.5 - dB
- 23 - dB
- 24 - dB
[1]
- 14.5 - dB
- 19 - dB
- 20 - dB
[1]
- 11.5 - dB
- 14.5 - dB
- 14 - dB
- 10.5 - dB
- 20 - dB
- 22 - dB
- 9 - dB
- 16 - dB
- 17 - dB
- 6.5 - dB
- 11 - dB
- 11.5 - dB
- 0.6 - dB
- 0.7 - dB
- 0.9 - dB
- 0.65 - dB
- 0.8 - dB
- 0.95 - dB
- 0.8 - dB
- 0.85 - dB
- 1.0 - dB
BFU520Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 February 2014
© NXP B.V. 2014. All rights reserved.
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