BFU520Y_15 Datasheet, PDF (4/20 Pages) NXP Semiconductors – Dual NPN wideband silicon RF transistor

NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor
8. Thermal characteristics
Table 8.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ Unit
[1] _{140 K/W}
[1] T_sp is the temperature at the solder point of the collector lead.
T_sp has the following relation to the ambient temperature T_amb:
T_sp = T_amb + P  R_th(sp-a)
With P being the power dissipation and R_th(sp-a) being the thermal resistance between the solder point and
ambient. R_th(sp-a) is determined by the heat transfer properties in the application.
The heat transfer properties are set by the application board materials, the board layout and the
environment e.g. housing.

3_WRW
P:

DDD





        
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Fig 1. Power derating curve
9. Characteristics
Table 9. Characteristics
T_amb = 25 C unless otherwise specified
Symbol Parameter
V_(BR)CBO collector-base breakdown voltage
V_(BR)CEO collector-emitter breakdown voltage
I_C
collector current
I_CBO
collector-base cut-off current
h_FE
DC current gain
C_e
emitter capacitance
C_re
feedback capacitance
C_c
collector capacitance
f_T
transition frequency
Conditions
I_C = 100 nA; I_E = 0 mA
I_C = 150 nA; I_B = 0 mA
I_E = 0 mA; V_CB = 8 V
I_C = 5 mA; V_CE = 8 V
V_EB = 0.5 V; f = 1 MHz
V_CE = 8 V; f = 1 MHz
V_CB = 8 V; f = 1 MHz
I_C = 10 mA; V_CE = 8 V; f = 900 MHz
Min Typ Max Unit
24 - - V
12 - - V
- 5 30 mA
- <1 - nA
60 95 200
- 0.64 - pF
- 0.30 - pF
- 0.48 - pF
- 10 - GHz
BFU520Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 February 2014
© NXP B.V. 2014. All rights reserved.
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