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BFU520Y_15 Datasheet, PDF (11/20 Pages) NXP Semiconductors – Dual NPN wideband silicon RF transistor | |||
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NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor
_V_
G%
DDD
9&(9
IC = 10 mA; Tamb = 25 ï°C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 14. Insertion power gain as a function of
collector-emitter voltage; typical values
*SPD[
G%
DDD
9&(9
IC = 10 mA; Tamb = 25 ï°C.
If K >1 then Gp(max) = maximum power gain. If K < 1 then
Gp(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 15. Maximum power gain as a function of
collector-emitter voltage; typical values
BFU520Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 20 February 2014
© NXP B.V. 2014. All rights reserved.
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