BFU520Y_15 Datasheet, PDF (10/20 Pages) NXP Semiconductors – Dual NPN wideband silicon RF transistor

NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor

_V__^
G%




DDD






*_SPD[
G%




DDD














,_&P$







,_&P$
V_CE = 8 V; T_amb = 25 C.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 12. Insertion power gain as a function of collector
current; typical values
V_CE = 8 V; T_amb = 25 C.
If K >1 then G_p(max) = maximum power gain. If K < 1 then
G_p(max) = MSG.
(1) f = 300 MHz
(2) f = 433 MHz
(3) f = 800 MHz
(4) f = 900 MHz
(5) f = 1800 MHz
Fig 13. Maximum power gain as a function of collector
current; typical values
BFU520Y
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 February 2014
© NXP B.V. 2014. All rights reserved.
10 of 20